Description
www.irf.com. 1. AN-1116. Application Note AN-1116. IRS2112 and IR2112 Comparison. By Jason Nguyen, Min Fang, David New. Table of Contents. Page. 6. 7. 5. 3. 2. 1. 9. 10. 11. 12. 13. HO. VB. VS. VCC. COM. LO. VSS. LIN. SD. HIN. VDD. IR2112 . Rg. 1 F. 1 F. Rg. +Vdc. +12V. Logic. Supply. Logic. Input Page 1. Semiconductor Components Industries, LLC, 2009. December, 2009 Rev. 3. 1. Publication Order Number: NCP3420/D. NCP3420. MOSFET Page 1. MEMC3PBLDCLVUM/D. NON-DISCLOSURE AGREEMENT REQUIRED . Motorola Embedded Motion Control. 3-Phase BLDC. Low-Voltage. U22 An integrated high voltage IC ( IR 2112 ) which provides gate control of a low side and a high side power transistor. As the source of the high side device
Part Number | IR2112 |
Main Category | Integrated Circuits (ICs) |
Sub Category | PMIC - Gate Drivers |
Brand | Hynix |
Description | IC MOSFET DRVR HI/LO SIDE 14-DIP |
Series | - |
Packaging | Tube |
Driven Configuration | Half-Bridge |
Channel Type | Independent |
Number of Drivers | 2 |
Gate Type | IGBT, N-Channel MOSFET |
Voltage - Supply | 10 V ~ 20 V |
Logic Voltage - VIL, VIH | 6V, 9.5V |
Current - Peak Output (Source, Sink) | 250mA, 500mA |
Input Type | Non-Inverting |
High Side Voltage - Max (Bootstrap) | 600V |
Rise / Fall Time (Typ) | 80ns, 40ns |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 14-DIP (0.300", 7.62mm) |
Supplier Device Package | 14-DIP |
Image |
IR2112
HYNIY
513
0.69
Norric Electronics (HK) Limited
IR2112
HYNXI
74582
1.58
Innovation Best Electronics Technology Limited
IR2112
HYNIX
3500
2.47
Xian Neng Technology (Hongkong) International Limited
IR2112
HYNX
3230
3.36
NOSIN (HK) ELECTRONICS CO., LIMITED
IR2112
HYINX
16812
4.25
Pujia Electronics Technology Co., Limited